High-frequency Si/SiGe phototransistor model: Operation on multiple polarization points

This article presents the results of our research on modeling an HPT SiGe heterojunction phototransistor. Usually this HPTs type work for a single point polarization in work, we were interested same different points polarization. We will model to operate at both 2V and 3V, so that can use multiple bias reduce costs allow reuse SiG phototransistor further studies. For defined optimize operation it flies with dynamic measurements not base by modifying certain values components HTP works other